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| BCX79 Discrete POWER & Signal Technologies BCX79 E B TO-92 C PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 45 45 5.0 500 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max BCX79 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation BCX79 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)EBO ICEX ICES IEBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IC = 10 mA, IB = 0 IE = 1.0 A, IC = 0 VCE = 45 V, VBE = 0.2 V, TA = +100 C VCE = 45 V, IE = 0, VCE = 45 V, IE = 0, TA = +125 C VEB = 4.0 V, IC = 0 45 5.0 20 10 2.5 20 V V A nA A nA ON CHARACTERISTICS hFE DC Current Gain VCE = 5.0 V, IC = 2.0 mA VCE = 1.0 V, IC = 10 mA VCE = 1.0 V, IC = 100 mA IC = 100 mA, IB = 2.5 mA IC = 100 mA, IB = 2.5 mA VCE = 5.0 V, IC = 2.0 mA VCE = 1.0 V, IC = 100 mA 0.6 120 80 40 630 1,000 0.6 1.0 0.7 0.9 V V V V VCE(sat) VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage SMALL SIGNAL CHARACTERISTICS Ccb Ceb hie hoe NF Collector-Base Capacitance Emitter-Base Capacitance Input Impedance Output Admittance Noise Figure VCB = 10 V, f = 1.0 MHz VEB = 0.5 V, f = 1.0 MHz IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz VCE = 5.0 V, IC = 0.2 mA, RS = 2.0 k, f = 1.0 kHz 1.6 4.5 15 8.5 100 6.0 pF pF k mhos dB SWITCHING CHARACTERISTICS ton ton toff toff Turn-on Time Turn-on Time Turn-off Time Turn-off Time VCC = 10 V, IC = 10 mA, VBB = 3.6 V, IB1 = IB2 = 1.0 mA VCC = 10 V, IC = 100 mA, VBB = 5.0 V, IB1 = IB2 = 10 mA VCC = 10 V, IC = 10 mA, VBB = 3.6 V, IB1 = IB2 = 1.0 mA VCC = 10 V, IC = 100 mA, VBB = 5.0 V, IB1 = IB2 = 10 mA 150 150 800 800 ns ns ns ns |
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